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1. general description the hef4069ub is a general purpose hex inverter. each inverter has a single stage. it operates over a recommended v dd power supply range of 3 v to 15 v referenced to v ss (usually ground). unused inputs must be connected to v dd , v ss , or another input. it is suitable for use over both the industrial ( - 40 cto+85 c) and automotive ( - 40 cto +125 c) temperature ranges. 2. features n fully static operation n 5 v, 10 v, and 15 v parametric ratings n standardized symmetrical output characteristics n operates across the automotive temperature range from - 40 c to +125 c n complies with jedec standard jesd 13-b n esd protection: u hbm jesd22-a114e exceeds 2000 v u mm jesd22-a115-a exceeds 200 v 3. applications n oscillator n automotive and industrial 4. ordering information hef4069ub hex inverter rev. 04 4 july 2008 product data sheet table 1. ordering information all types operate from - 40 c to +125 c. type number package name description version hef4069ubp dip14 plastic dual in-line package; 14 leads (300 mil) sot27-1 hef4069ubt so14 plastic small outline package; 14 leads; body width 3.9 mm sot108-1 hef4069ubtt tssop14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm sot402-1
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 2 of 16 nxp semiconductors hef4069ub hex inverter 5. functional diagram 6. pinning information 6.1 pinning 6.2 pin description fig 1. functional diagram fig 2. schematic diagram (one inverter) 001aag152 1 1a 1y 2 3 2a 2y 4 5 3a 3y 6 9 4a 4y 8 11 5a 5y 10 13 6a 6y 12 001aag154 v dd v ss y a fig 3. pin con?guration hef4069ub 1a v dd 1y 6a 2a 6y 2y 5a 3a 5y 3y 4a v ss 4y 001aag153 1 2 3 4 5 6 7 8 10 9 12 11 14 13 table 2. pin description symbol pin description 1a to 6a 1, 3, 5, 9, 11, 13 input 1y to 6y 2, 4, 6, 8, 10, 12 output v ss 7 ground (0 v) v dd 14 supply voltage
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 3 of 16 nxp semiconductors hef4069ub hex inverter 7. limiting values [1] for dip14 packages: above t amb = 70 c, p tot derates linearly with 12 mw/k. [2] for so14 packages: above t amb = 70 c, p tot derates linearly with 8 mw/k. [3] for tssop14 packages: above t amb = 60 c, p tot derates linearly with 5.5 mw/k. 8. recommended operating conditions table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v dd supply voltage - 0.5 +18 v i ik input clamping current v i < 0.5 v or v i >v dd + 0.5 v - 10 ma v i input voltage - 0.5 v dd + 0.5 v i ok output clamping current v o < 0.5 v or v o >v dd + 0.5 v - 10 ma i i/o input/output current - 10 ma i dd supply current - 50 ma t stg storage temperature - 65 +150 c t amb ambient temperature - 40 +125 c p tot total power dissipation t amb = - 40 c to +125 c dip14 [1] - 750 mw so14 [2] - 500 mw tssop14 [3] - 500 mw p power dissipation per output - 100 mw table 4. recommended operating conditions symbol parameter conditions min typ max unit v dd supply voltage 3 - 15 v v i input voltage 0 - v dd v t amb ambient temperature in free air - 40 - +125 c d t/ d v input transition rise and fall rate v dd = 5 v - - 3.75 ns/v v dd = 10 v - - 0.5 ns/v v dd = 15 v - - 0.08 ns/v
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 4 of 16 nxp semiconductors hef4069ub hex inverter 9. static characteristics 10. dynamic characteristics table 5. static characteristics v ss = 0 v; v i =v ss or v dd ; unless otherwise speci?ed. symbol parameter conditions v dd t amb = - 40 c t amb = +25 c t amb = +85 c t amb = +125 c unit min max min max min max min max v ih high-level input voltage | i o | <1 m a 5v4-4-4-4-v 10v8-8-8-8-v 15 v 12.5 - 12.5 - 12.5 - 12.5 - v v il low-level input voltage | i o | <1 m a 5v-1-1-1-1v 10v-2-2-2-2v 15 v - 2.5 - 2.5 - 2.5 - 2.5 v v oh high-level output voltage | i o | <1 m a 5 v 4.95 - 4.95 - 4.95 - 4.95 - v 10 v 9.95 - 9.95 - 9.95 - 9.95 - v 15 v 14.95 - 14.95 - 14.95 - 14.95 - v v ol low-level output voltage | i o | <1 m a 5 v - 0.05 - 0.05 - 0.05 - 0.05 v 10 v - 0.05 - 0.05 - 0.05 - 0.05 v 15 v - 0.05 - 0.05 - 0.05 - 0.05 v i oh high-level output current v o = 2.5 v 5 v - 1.7 - - 1.4 - - 1.1 - - 1.1 - ma v o = 4.6 v 5 v - 0.64 - - 0.5 - - 0.36 - - 0.36 - ma v o = 9.5 v 10 v - 1.6 - - 1.3 - - 0.9 - - 0.9 - ma v o = 13.5 v 15 v - 4.2 - - 3.4 - - 2.4 - - 2.4 - ma i ol low-level output current v o = 0.4 v 5 v 0.64 - 0.5 - 0.36 - 0.36 - ma v o = 0.5 v 10 v 1.6 - 1.3 - 0.9 - 0.9 - ma v o = 1.5 v 15 v 4.2 - 3.4 - 2.4 - 2.4 - ma i i input leakage current 15 v - 0.1 - 0.1 - 1.0 - 1.0 m a i dd supply current all valid input combinations; i o =0a 5 v - 0.25 - 0.25 - 7.5 - 7.5 m a 10 v - 0.5 - 0.5 - 15.0 - 15.0 m a 15 v - 1.0 - 1.0 - 30.0 - 30.0 m a c i input capacitance digital inputs - - - 7.5 ----pf table 6. dynamic characteristics t amb = 25 c; c l = 50 pf; t r = t f 20 ns; for test circuit see figure 5 . symbol parameter conditions v dd extrapolation formula [1] min typ max unit t phl high to low propagation delay na to ny; see figure 4 5 v 18 + 0.55 c l -4590ns 10 v 9 + 0.23 c l -2040ns 15 v 7 + 0.16 c l -1525ns
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 5 of 16 nxp semiconductors hef4069ub hex inverter [1] the typical value of the propagation delay and output transition time can be calculated with the extrapolation formula (c l in pf). 11. waveforms t plh low to high propagation delay na to ny; see figure 4 5 v 13 + 0.55 c l -4080ns 10 v 9 + 0.23 c l -2040ns 15 v 7 + 0.16 c l -1530ns t thl high to low output transition time output ny; see figure 4 5 v 10 + 1.0 0 c l - 60 120 ns 10 v 9 + 0.42 c l -3060ns 15 v 6 + 0.28 c l -2040ns t tlh low to high output transition time output ny; see figure 4 5 v 10 + 1.00 c l - 60 120 ns 10 v 9 + 0.42 c l -3060ns 15 v 6 + 0.28 c l -2040ns table 6. dynamic characteristics continued t amb = 25 c; c l = 50 pf; t r = t f 20 ns; for test circuit see figure 5 . symbol parameter conditions v dd extrapolation formula [1] min typ max unit table 7. dynamic power dissipation v ss = 0 v; t r = t f 20 ns; t amb = 25 c. symbol parameter v dd typical formula where p d dynamic power dissipation 5 v p d = 600 f i + s (f o c l ) v dd 2 ( m w) f i = input frequency in mhz; f o = output frequency in mhz; c l = output load capacitance in pf; s (f o c l ) = sum of the outputs; v dd = supply voltage in v. 10 v p d = 4000 f i + s (f o c l ) v dd 2 ( m w) 15 v p d = 22000 f i + s (f o c l ) v dd 2 ( m w) measurement points: v m = 0.5v dd . logic levels: v ol and v oh are typical output voltage levels that occur with the output load. fig 4. propagation delay and transition times 001aag185 t plh t phl t tlh 90 % 10 % t thl t r t f 90 % 10 % v m v m input output 0 v v i v oh v ol
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 6 of 16 nxp semiconductors hef4069ub hex inverter de?nitions for test circuit: v dd = 5 v to 15 v; v i = v ss or v dd ; c l = load capacitance including jig and probe capacitance = 50 pf; r t = termination resistance should be equal to the output impedance z o of the pulse generator; fig 5. test circuit v dd v i v o 001aag182 dut c l r t g
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 7 of 16 nxp semiconductors hef4069ub hex inverter 11.1 transfer characteristics a. v dd = 5 v; i o = 0 a b. v dd = 10 v; i o = 0 a c. v dd = 15 v; i o = 0 a (1) v o = output voltage. (2) i d = drain current. fig 6. typical transfer characteristics v i (v) 0 5.0 2.5 001aag159 2.5 5.0 v o (v) i d ( m a) 0 250 500 0 (2) (2) (1) v i (v) 010 5 001aag160 5 10 v o (v) i d (ma) 0 5 10 0 (2) (2) (1) v i (v) 020 10 001aag161 10 20 v o (v) i d (ma) 0 10 20 0 (2) (2) (1)
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 8 of 16 nxp semiconductors hef4069ub hex inverter 12. application information some examples of applications for the hef4069ub. figure 7 shows an astable relaxation oscillator using two hef4069ub inverters and 2 baw62 diodes. the oscillation frequency is mainly determined by r1 c1, provided r1 << r2 and r2 c2 << r1 c1. the function of r2 is to minimize the in?uence of the forward voltage across the protection diodes on the frequency; c2 is a stray (parasitic) capacitance. the period t p is given by t p =t 1 +t 2 , where: v st = the signal threshold level of the inverter. the period is fairly independent of v dd ,v st and temperature. the duty factor, however, is in?uenced by v st . t 1 r1c1in v dd v st + v st --------------------------- = t 2 r1c1in 2v dd v st C v dd v st C ------------------------------ = fig 7. astable relaxation oscillator 001aag162 forward voltage clamping diode d c b a c2 c1 b a c d r2 r1 v dd v dd 0 v v dd 0 v 1.5v dd v dd 0.5v dd 0 v - 0.5v dd v dd 0.5v dd 0 v v ss 1/6 hef4069ub 1/6 hef4069ub
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 9 of 16 nxp semiconductors hef4069ub hex inverter figure 8 shows a crystal oscillator for frequencies up to 10 mhz using two hef4069ub inverters.the second inverter ampli?es the oscillator output voltage to a level suf?cient to drive other local oxidation cmos (locmos) circuits. figure 9 and figure 10 show voltage gain and supply current. figure 11 shows the test set-up and an example of an analog ampli?er using one hef4069ub. the output inverter is used to amplify the oscillator output voltage to a level suf?cient to drive other locmos circuits. fig 8. crystal oscillator 001aag155 2.2 k w 100 pf 22 pf 2 mhz 1 m w 1 m w 22 pf 1/6 hef4069ub 1/6 hef4069ub fig 9. typical voltage gain as a function of supply voltage fig 10. typical supply current as a function of supply voltage v dd (v) 015 10 5 001aag156 25 50 typ 75 gain (v o /v i ) 0 001aag157 v dd (v) 015 10 5 10 5 15 20 i dd (ma) 0 typ fig 11. test set-up 001aag158 330 k w 1/6 hef4069ub
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 10 of 16 nxp semiconductors hef4069ub hex inverter figure 12 shows typical forward transconductance and figure 13 shows the test set-up. (1) average. (2) average +2 s ; where: s is the standard deviation. (3) average - 2 s ; where: s is the standard deviation. at v o is constant. test data is given in t ab le 8 fig 12. typical forward transconductance as a function of supply voltage at t amb = 25 c fig 13. test set-up 001aag164 v dd (v) 015 10 5 5.0 2.5 7.5 10 g fs (ma/v) 0 (1) (2) (3) 001aag163 v dd v ss input output 100 m f r bias = 560 k w 0.47 m f i o v i a g fs di o dv i --------- = table 8. test data supply voltage input v dd v i f i t r , t f 5 v to 15 v v ss or v dd 1 khz 20 ns
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 11 of 16 nxp semiconductors hef4069ub hex inverter 13. package outline fig 14. package outline sot27-1 (dip14) unit a max. 1 2 (1) (1) b 1 cd (1) z ee m h l references outline version european projection issue date iec jedec jeita mm inches dimensions (inch dimensions are derived from the original mm dimensions) sot27-1 99-12-27 03-02-13 a min. a max. b max. w m e e 1 1.73 1.13 0.53 0.38 0.36 0.23 19.50 18.55 6.48 6.20 3.60 3.05 0.254 2.54 7.62 8.25 7.80 10.0 8.3 2.2 4.2 0.51 3.2 0.068 0.044 0.021 0.015 0.77 0.73 0.014 0.009 0.26 0.24 0.14 0.12 0.01 0.1 0.3 0.32 0.31 0.39 0.33 0.087 0.17 0.02 0.13 050g04 mo-001 sc-501-14 m h c (e ) 1 m e a l seating plane a 1 w m b 1 e d a 2 z 14 1 8 7 b e pin 1 index 0 5 10 mm scale note 1. plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. dip14: plastic dual in-line package; 14 leads (300 mil) sot27-1
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 12 of 16 nxp semiconductors hef4069ub hex inverter fig 15. package outline sot108-1 (so14) unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec jeita mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 8.75 8.55 4.0 3.8 1.27 6.2 5.8 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.0 0.4 sot108-1 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 7 8 1 14 y 076e06 ms-012 pin 1 index 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.35 0.34 0.16 0.15 0.05 1.05 0.041 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.25 0.01 0.004 0.039 0.016 99-12-27 03-02-19 0 2.5 5 mm scale so14: plastic small outline package; 14 leads; body width 3.9 mm sot108-1
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 13 of 16 nxp semiconductors hef4069ub hex inverter fig 16. package outline sot402-1 (tssop14) unit a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec jeita mm 0.15 0.05 0.95 0.80 0.30 0.19 0.2 0.1 5.1 4.9 4.5 4.3 0.65 6.6 6.2 0.4 0.3 0.72 0.38 8 0 o o 0.13 0.1 0.2 1 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic interlead protrusions of 0.25 mm maximum per side are not included. 0.75 0.50 sot402-1 mo-153 99-12-27 03-02-18 w m b p d z e 0.25 17 14 8 q a a 1 a 2 l p q detail x l (a ) 3 h e e c v m a x a y 0 2.5 5 mm scale tssop14: plastic thin shrink small outline package; 14 leads; body width 4.4 mm sot402-1 a max. 1.1 pin 1 index
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 14 of 16 nxp semiconductors hef4069ub hex inverter 14. abbreviations 15. revision history table 9. abbreviations acronym description dut device under test esd electrostatic discharge hbm human body model mm machine model table 10. revision history document id release date data sheet status change notice supersedes hef4069ub_4 20080704 product data sheet - hef4069ub_cnv_3 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? temperature range maximum increased from 85 c to 125 c throughout the data sheet. ? package sot73 removed and bare die package added to section 4 order ing inf or mation and section 13 p ac kage outline . ? section 7 limiting v alues and section 9 static char acter istics added, taken from the he4000b family speci?cations data sheet. ? section 9 static char acter istics i oh , i ol , i i and i dd values updated. ? typical temperature coef?cient for propagation delays and output transitions removed. ? section 14 ab bre viations added. hef4069ub_cnv_3 19950101 product speci?cation - hef4069ub_cnv_2 hef4069ub_cnv_2 19950101 product speci?cation - -
hef4069ub_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 15 of 16 nxp semiconductors hef4069ub hex inverter 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 16.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 16.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 17. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors hef4069ub hex inverter ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 4 july 2008 document identifier: hef4069ub_4 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 ordering information . . . . . . . . . . . . . . . . . . . . . 1 5 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 recommended operating conditions. . . . . . . . 3 9 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 10 dynamic characteristics . . . . . . . . . . . . . . . . . . 4 11 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 11.1 transfer characteristics . . . . . . . . . . . . . . . . . . . 7 12 application information. . . . . . . . . . . . . . . . . . . 8 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 16.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 16.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 17 contact information. . . . . . . . . . . . . . . . . . . . . 15 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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